PTFA072401EL Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz

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Typical Performance (data taken in Infineon production test fixture)
PTFA072401EL
PTFA072401FL
Broadband Performance
V_DD = 30 V, I_DQ = 1800 m A, P_OUT = 126 W
50
0
45
Efficiency
-5
40
-10
35
Return Loss ^-15
30
-20
25
-25
Gain
20
-30
15
700
730
760
Frequency (MHz)
-35
790
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1800 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
-25
-30
-35
-40
-45
-50
-55
-60
42
50
Efficiency
45
IM3
40
IM5
35
30
25
IM7
44 46 48 50 52 54
Output Power, PEP (dBm)
20
15
56
CW Performance, selected voltages
I_DQ = 1.8 A, ƒ = 770 MHz
V_DD = 26 V
64
V_DD = 28 V
V_DD = 32 V
20
60
Efficiency
19
56
52
18
48
44
40
36
49
Gain
50 51 52 53 54
Output Power (dBm)
17
16
15
55
Power Sweep
V_DD = 30 V, ƒ = 770 MHz
21
20
19
18
17
16
15
30
I_DQ = 2.2 A
I_DQ = 2.0 A
I_DQ = 1.8 A
I_DQ = 1.6 A
I_DQ = 1.4 A
35
40
45
50
55
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02, 2009-03-27