PTFA072401EL Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1800 mA, P_OUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min
G_ps
18
η_D
43
IMD
—
PTFA072401EL
PTFA072401FL
Typ
Max
Unit
19
—
dB
45
—
%
–29
–28
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 2100 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 240 W CW)
Ordering Information
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Min Typ
65
—
—
—
—
—
—
1.82
2.0
2.5
—
—
Max
—
1.0
10.0
—
3.0
1.0
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.28
Unit
V
µA
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
Package Outline Package Description
PTFA072401EL V4 H-33288-2
Thermally-enhanced slotted flange,
single-ended
PTFA072401FL V4 H-34288-2
Thermally-enhanced earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Shipping
Tray
Tray
Marking
PTFA072401EL
PTFA072401FL
Rev. 02, 2009-03-27