PTF191601 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Advance Information
PTF191601
Ordering Information
Type
PTF191601E
Package Outline
30260
Package Outline Specifications
Package Description
Thermally enhanced, flange mount
Marking
PTF191601E
Package 30260
45° X (2.03
[.080])
(2X 4.83±0.50
[.190±.020])
LID 13.21
+0.10
-0.15
[.520 ^+-.]0.00064
2X 12.70
[.500]
D
G
4X R 1.52
[.060]
S
2X 3.25
[.128]
2X 1.63
[.064] R
13.72
[.540]
23.37±0.51
[.920±.020]
SPH 1.57
[.062]
0.51
[.020]
1.02
[.040]
22.35±0.23
[.880±.009]
27.94
[1.100]
34.04
[1.340]
4.11±0.38
[.162±.015]
0.038 [.0015] -A-
ERA- H- 3 0 2 6 0 - 2 - 1 - 2 3 0 2
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
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Developmental Data Sheet
3 of 4
2004-03-17