PTF191601 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Advance Information
PTF191601
LDMOS RF Power Field Effect Transistor
160 W, 1930 – 1990 MHz
Description
Features
The PTF191601 is a 160 W, internally matched GOLDMOS FET intended
for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Typical EDGE EVM Performance
V_DD = 28 V, I_DQ = 2.2 A, f = 1989.1 MHz
4
40
35
3
30
25
2
Ef f iciency
EV M
20
15
1
10
5
0
0
30
35
40
45
50
55
Output Power (dBm)
• Broadband internal matching
• Typical EDGE performance
- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%
• Typical CW performance
- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
PTF191601E
Package 30260
ESD: Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.2 A, P_OUT = 62 W, f = 1989.8 MHz
Characteristic
Symbol Min Typ
Max Units
Error Vector Magnitude
EVM (RMS) —
1.7
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–73
—
dBc
Gain
Drain Efficiency
G_ps
—
14
—
dB
η_D
—
32
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.2 A, P_OUT = 160 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
—
14
—
36
—
–30
Developmental Data Sheet
1 of 4
Max Units
—
dB
—
%
—
dBc
2004-03-17