IPD5N25S3-430 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS™-T Power-Transistor

IPD5N25S3-430
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics¹⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0V, V _DS=25V,
f =1MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=125V, V _GS=10V,
-
t _d(off)
I _D=5A, R _G=3.5W
-
t_f
-
317
422 pF
117
156
6
13
3
- ns
2
-
8
-
5
-
Gate Charge Characteristics^{1), 3)}
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q _gs
Q _gd
V _DD=200V, I _D=5A,
Q_g
V _GS=0 to 10V
V _plateau
-
1.5
2 nC
-
1.3
2.7
-
4.7
6.2
-
4.7
-V
Reverse Diode
Diode continous forward current¹⁾
Diode pulse current¹⁾
Diode forward voltage
Reverse recovery time¹⁾
I_S
I _S,pulse
T _C=25°C
V _SD
V _GS=0V, I _F=5A,
T _j=25°C
t _rr
V _R=125V, I _F=5A,
di _F/dt =100A/µs
-
-
5A
-
-
20
-
0.9
1.2 V
-
70
- ns
Reverse recovery charge¹⁾
Q _rr
-
159
- nC
1) _{Defined by design. Not subject to production test.}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{Devices thermal performance determined according to EIA JESD 51-14}
"Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
Rev. 1.0
page 3
2012-10-18