IPD5N25S3-430 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-T Power-Transistor

OptiMOS^™-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD5N25S3-430
Product Summary
V _DS
R _DS(on),max
I_D
250 V
430 mW
5A
PG-TO252-3-313
Type
IPD5N25S3-430
Package
PG-TO252-3-
Marking
3N25430
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current¹⁾
Avalanche energy, single pulse¹⁾
Avalanche current, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
I_D
I _D,pulse
E _AS
I _AS
dv /dt
V _GS
P _tot
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V¹⁾
T _C=25°C
I _D=1.3A
-
-
T _C=25°C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
5
4
20
13
1.3
6
±20
41
-55 ... +175
55/175/56
Unit
A
mJ
A
kV/µs
V
W
°C
Rev. 1.0
page 1
2012-10-18