IPB64N25S3-20_15 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

Parameter
Dynamic characteristics¹⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics¹⁾
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current¹⁾
Diode pulse current¹⁾
Diode forward voltage
Reverse recovery time¹⁾
Symbol
Conditions
IPB64N25S3-20
min.
Values
typ.
Unit
max.
C _iss
-
C _oss
V _GS=0V, V _DS=25V,
f =1MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=100V, V _GS=10V,
-
t _d(off)
I _D=25A, R _G=1.6
-
t_f
-
5240
2900
85
18
20
45
12
7000 pF
3900
170
- ns
-
-
-
Q _gs
-
24
31 nC
Q _gd
V _DD=200V, I _D=64A,
-
11
22
Q_g
V _GS=0 to 10V
-
67
89
V _plateau
-
4.8
-V
I_S
I _S,pulse
V _SD
T _C=25°C
V _GS=0V, I _F=64A,
T _j=25°C
t _rr
V _R=125V, I _F=50A,
di _F/dt =100A/µs
-
-
64 A
-
-
256
-
1
1.2 V
-
174
- ns
Reverse recovery charge¹⁾
Q _rr
-
1095
- nC
1) _{Defined by design. Not subject to production test.}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{Devices thermal performance determined according to EIA JESD 51-14}
"Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
Rev. 1.1
page 3
2014-09-12