IPB64N25S3-20_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V_DS
R_DS(on),max
I_D
IPB64N25S3-20
250 V
20 m
64 A
PG‐TO263‐3‐2
Type
IPB64N25S3-20
Package
PG-TO263-3-2
Marking
3PN2520
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Conditions
I_D
T _C=25 °C, V _GS=10 V
T _C=100°C, V _GS=10V¹⁾
Pulsed drain current¹⁾
Avalanche energy, single pulse¹⁾
I _D,pulse
E _AS
T _C=25°C
I _D=27A
Avalanche current, single pulse
I _AS
-
Reverse diode dv /dt
dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
-
P _tot
T _C=25°C
T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
64
46
256
270
27
6
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
A
kV/µs
V
W
°C
Rev. 1.1
page 1
2014-09-12