IPB45N06S3L-13 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

Parameter
Symbol
IPB45N06S3L-13
IPI45N06S3L-13, IPP45N06S3L-13
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
3600
- pF
C _oss
V _GS=0 V, V _DS=25 V,
f =1 MHz
-
450
-
C_rss
-
430
-
t _d(on)
-
13
- ns
t_r
V _DD=27.5 V,
-
46
-
V _GS=10 V, I _D=45 A,
t _d(off)
R _G=20 Ω
-
58
-
t_f
-
124
-
Gate Charge Characteristics²⁾
Gate to source charge
Q _gs
-
19
- nC
Gate to drain charge
Gate charge total
Q _gd
V _DD=11 V, I _D=45 A,
-
Q_g
V _GS=0 to 10 V
-
9
-
50
75
Gate plateau voltage
V _plateau
-
4.9
-V
Reverse Diode
Diode continous forward current²⁾
Diode pulse current²⁾
I_S
I _S,pulse
T _C=25 °C
-
-
5A
-
-
180
Diode forward voltage
V _SD
V _GS=0 V, I _F=25 A,
T _j=25 °C
0.6
0.9
1.3 V
Reverse recovery time²⁾
Reverse recovery charge²⁾
t _rr
V _R=27.5 V, I _F=I _S,
Q _rr
di _F/dt =100 A/µs
-
20
- ns
-
25
- nC
1) _{Current is limited by bondwire; with an R thJC = 2.3 K/W the chip is able to carry 52 A at 25°C. For detailed}
information see Application Note ANPS071E at www.infineon.com/optimos
2) _{Defined by design. Not subject to production test.}
3) _{Qualified at -5V and +16V.}
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.2
page 3
2007-09-06