IPB45N06S3L-13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPB45N06S3L-13
IPI45N06S3L-13, IPP45N06S3L-13
OptiMOS^®-T Power-Transistor
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
13.1 mΩ
45 A
• 175°C operating temperature
• Green package (RoHS compliant)
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• Ultra low Rds(on)
• 100% Avalanche tested
Type
IPB45N06S3L-13
IPI45N06S3L-13
IPP45N06S3L-13
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L13
3N06L13
3N06L13
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
Gate source voltage³⁾
E _AS
V _GS
I _D=27.5 A
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
45
A
37
180
95
mJ
±16
V
65
W
-55 ... +175
°C
55/175/56
Rev. 2.2
page 1
2007-09-06