IPB120N06NG Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

Parameter
Symbol Conditions
IPB120N06N G IPP120N06N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=30 V,
f =1 MHz
-
C _rss
-
t _d(on)
-
t_r
V _DD=30 V, V _GS=10 V,
-
t _d(off)
I _D=75 A, R _G=6.2 Ω
-
t_f
-
1600
460
120
14
27
34
26
2100 pF
610
180
20 ns
40
50
39
Gate Charge Characteristics³⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q _gs
-
Q _g(th)
-
Q _gd
V _DD=30 V, I _D=75 A,
-
Q _sw
V _GS=0 to 10 V
-
Q_g
-
V _plateau
-
Q _oss
V _DD=30 V, V _GS=10 V
-
9
12 nC
5
6
21
32
26
38
46
62
5.8
-V
30
40
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=75 A,
T _j=25 °C
t _rr
V _R=30 V, I _F=I _S,
Q _rr
di _F/dt =100 A/µs
3) _{See figure 16 for gate charge parameter definition}
-
-
75 A
-
-
300
-
1
1.3 V
-
45
60 ns
-
64
80 nC
Rev. 1.11
page 3
2006-07-05