IPB120N06NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB120N06N G IPP120N06N G
Product Summary
V _DS
R _{DS(on),max SMDversion}
I_D
60 V
11.7 mΩ
75 A
Type
IPP120N06N G
IPB120N06N G
Package
Marking
P-TO220-3-1
120N06N
P-TO263-3-2
120N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C¹⁾
Avalanche energy, single pulse
E _AS
I _D=75 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=75 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{See figure 3}
Rev. 1.11
page 1
Value
75
53
300
280
6
±20
158
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-07-05