IPB06CN10NG_10 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

Parameter
Symbol Conditions
IPB06CN10N G IPI06CN10N G
IPP06CN10N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=50 V,
f =1 MHz
-
C _rss
-
t _d(on)
-
t_r
V _DD=50 V, V _GS=10 V,
-
t _d(off)
I _D=50 A, R _G=1.6 Ω
-
t_f
-
6920
1050
58
17
27
26
7
9200 pF
1400
87
26 ns
40
39
10
Gate Charge Characteristics⁶⁾
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q _gs
-
Q _gd
-
Q _sw
V _DD=50 V, I _D=100 A,
V _GS=0 to 10 V
-
Q_g
-
V _plateau
-
Q _oss
V _DD=50 V, V _GS=0 V
-
36
49 nC
25
37
40
58
104
139
5.3
-V
111
148 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=100 A,
T _j=25 °C
t _rr
V _R=50 V, I _F=I _S,
Q _rr
di _F/dt =100 A/µs
-
-
100 A
-
-
400
-
1
1.2 V
-
110
ns
-
295
- nC
6) _{See figure 16 for gate charge parameter definition}
Rev. 1.93
page 3
2010-01-18