IPB06CN10NG_10 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

IPB06CN10N G IPI06CN10N G
IPP06CN10N G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
Thermal resistance,
R _thJA minimal footprint
-
junction - ambient
6 cm² cooling area⁵⁾
-
-
0.7 K/W
-
62
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
100
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=180 µA
2
3
Zero gate voltage drain current
I _DSS
V _DS=80 V, V _GS=0 V,
T _j=25 °C
-
0.1
-V
4
1 µA
V _DS=80 V, V _GS=0 V,
T _j=125 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on)
V _GS=10 V, I _D=100 A,
TO220, TO262
-
10
100
1
100 nA
5.0
6.5 mΩ
Gate resistance
Transconductance
V _GS=10 V, I _D=100 A,
-
TO263
4.7
6.2
R_G
-
1.6
-Ω
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=100 A
67
134
-S
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 124 A.}
3) _{See figure 3}
4) _{Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V}
5) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.93
page 2
2010-01-18