IPA60R299CP Datasheet, PDF (3/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

IPA60R299CP
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C _iss
V _GS=0 V, V _DS=100 V,
-
C _oss
f =1 MHz
-
Effective output capacitance, energy
related⁶⁾
C _o(er)
-
V _GS=0 V, V _DS=0 V
to 480 V
Effective output capacitance, time
related⁷⁾
C _o(tr)
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t _d(on)
-
t_r
V _DD=400 V,
-
V _GS=10 V, I _D=6,6 A,
t _d(off)
R _G=4,3 Ω
-
t_f
-
1100
60
46
120
10
5
40
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q _gs
-
Q _gd
V _DD=400 V, I _D=6.6 A,
-
Q_g
V _GS=0 to 10 V
-
V _plateau
-
5
- nC
7.6
-
22
29
5.0
-V
Reverse Diode
Diode forward voltage
V _SD
V _GS=0 V, I _F=6.6 A,
T _j=25 °C
-
0.9
1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t _rr
Q _rr
V _R=400 V, I _F=I _S,
di _F/dt =100 A/µs
I _rrm
-
300
- ns
-
3.9
- µC
-
26
-A
1) _{J-STD20 and JESD22}
2) _{Limited only by maximum temperature}
3) _{Pulse width t p limited by T j,max}
4) _{Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.}
5) _{ISD<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.}
6) _{C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.}
7) _{C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.}
Rev. 1.3
page 3
2005-12-22