IPA60R299CP Datasheet, PDF (2/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current²⁾
Diode pulse current³⁾
Reverse diode dv /dt ⁵⁾
Symbol Conditions
I_S
I _S,pulse
T _C=25 °C
dv /dt
IPA60R299CP
Value
11
34
15
Unit
A
V/ns
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R _thJC
R _thJA
Soldering temperature,
wavesoldering only allowed at leads
T _sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
-
-
3.8 K/W
-
-
80
-
-
260 °C
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=250 µA
600
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=0,44 mA 2.5
3
3.5
Zero gate voltage drain current
I _DSS
V _DS=600 V, V _GS=0 V,
T _j=25 °C
-
V _DS=600 V, V _GS=0 V,
T _j=150 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on)
V _GS=10 V, I _D=6.6 A,
T _j=25 °C
-
V _GS=10 V, I _D=6.6 A,
T _j=150 °C
-
Gate resistance
R_G
f =1 MHz, open drain
-
-
1 µA
10
-
-
100 nA
0.27 0.299 Ω
0.73
1.9
-Ω
Rev. 1.3
page 2
2005-12-22