IHW40T120_08 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Soft Switching Series

Soft Switching Series
IHW40T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
R_thJC
R_thJCD
R_thJA
Conditions
Max. Value
Unit
0.45
K/W
1.1
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V_(BR)CES
V_CE(sat)
V_F
V_GE(th)
I_CES
V_GE=0V, I_C=1.5mA
V_GE = 15V, I_C=40A
T_j=25°C
T_j=125°C
T_j=150°C
V_GE=0V, I_F=18A
T_j=25°C
T_j=125°C
T_j=150°C
I_C=1.5mA,V_CE=V_GE
V_CE=1200V,
V_GE=0V
T_j=25°C
T_j=150°C
I_GES
g_fs
R_Gint
V_CE=0V,V_GE=20V
V_CE=20V, I_C=40A
min.
1200
-
-
-
5.0
-
-
-
-
Value
Typ.
-
1.8
2.1
2.3
1.65
1.7
1.7
5.8
-
-
-
21
6
Unit
max.
-V
2.3
-
-
2.15
6.5
mA
0.4
4.0
600 nA
-S
Ω
Dynamic Characteristic
Input capacitance
C_iss
V_CE=25V,
-
Output capacitance
C_oss
V_GE=0V,
-
Reverse transfer capacitance
C_rss
f=1MHz
-
Gate charge
Q_Gate
V_CC=960V, I_C=40A
-
V_GE=15V
Internal emitter inductance
L_E
-
measured 5mm (0.197 in.) from case
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
V_CC = 600V,
T_j = 25°C
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
3
2500
130
110
203
13
210
- pF
-
-
- nC
- nH
-A
Rev. 2.3 Sep 08