IHW40T120_08 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Soft Switching Series

Soft Switching Series
IHW40T120
Low Loss DuoPack : IGBT in TrenchStop^® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Short circuit withstand time – 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• TrenchStop^® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V_CE(sat)
• Very soft, fast recovery anti-parallel EmCon^™ HE diode
• Low EMI
• Qualified according to JEDEC¹ for target applications
• Application specific optimisation of inverse diode
• •Pb-free lead plating; RoHS compliant
G
E
PG-TO-247-3
Type
V_CE
I_C
V_{CE(sat),Tj=25°C} T_j,max Marking
Package
IHW40T120 1200V 40A
1.8V
150°C H40T120 PG-TO247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Diode surge non repetitive current, t_p limited by T_jmax
T_C = 25°C, t_p = 10ms, sine halfwave
T_C = 25°C, t_p ≤ 2.5µs, sine halfwave
T_C = 100°C, t_p ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation, T_C = 25°C
Operating junction temperature
Storage temperature
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
I_FSM
V_GE
t_SC
P_tot
T_j
T_stg
1200
75
40
105
105
31
19.8
47
78
200
160
±20
10
270
-40...+150
-55...+150
Unit
V
A
A
V
µs
W
°C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.3 Sep 08