BUZ102S Datasheet, PDF (3/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

BUZ 102S
Electrical Characteristics, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V_DS≥2*I_D*R_DS(on)max , I_D = 37 A
Input capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Turn-on delay time
V_DD = 30 V, V_GS = 10 V, I_D = 52 A,
R_G = 6.8 Ω
Rise time
V_DD = 30 V, V_GS = 10 V, I_D = 52 A,
R_G = 6.8 Ω
g_fs
C_iss
C_oss
C_rss
t_d(on)
10 28
-S
- 1220 1525 pF
-
410 515
-
210 265
-
12 18 ns
t_r
-
22 33
Turn-off delay time
V_DD = 30 V, V_GS = 10 V, I_D = 52 A,
R_G = 6.8 Ω
Fall time
V_DD = 30 V, V_GS = 10 V, I_D = 52 A,
R_G = 6.8 Ω
t_d(off)
-
30 45
t_f
-
25 40
Data Book
3
05.99