BUZ102S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

BUZ 102S
SIPMOS Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175 ˚C operating temperature
V_DS
55 V
R_DS(on) 0.018 Ω
I_D
52 A
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package Ordering Code
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Packaging
Tube
Tape and Reel
Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at T_j = 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 ˚C
T_C = 100 ˚C
Pulsed drain current
T_C = 25 ˚C
Avalanche energy, single pulse
I_D = 52 A, V_DD = 25 V, R_GS = 25 Ω
IDpulse
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = 52 A, V_DS = 40 V, di/dt = 200 A/µs,
T_jmax = 175 ˚C
Gate source voltage
Power dissipation
T_C = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
52
37
208
245
12
6
Unit
A
mJ
kV/µs
±20
V
120
W
-55... +175
˚C
55/175/56
Data Book
1
05.99