BSZ018NE2LSI Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET

Parameter
Symbol Conditions
BSZ018NE2LSI
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=12 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=12 V, V _GS=10 V,
-
t _d(off)
I _D=30 A, R _G,ext=1.6 W
-
t_f
-
2500
1100
110
5.2
4.8
25
3.6
3325 pF
1463
-
- ns
-
-
-
Gate Charge Characteristics⁵⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Q _gs
-
6.3
8.4 nC
Q _g(th)
-
4.1
-
Q _gd
V _DD=12 V, I _D=30 A,
-
4.3
6.5
Q _sw
V _GS=0 to 4.5 V
-
6.6
-
Q_g
-
17
23
V _plateau
2.5
V
Gate charge total
Q_g
V _DD=12 V, I _D=30 A,
V _GS=0 to 10 V
-
36
48 nC
Gate charge total, sync. FET
Output charge
Q _g(sync)
V _DS=0.1 V,
V _GS=0 to 4.5 V
-
Q _oss
V _DD=12 V, V _GS=0 V
-
15
-
23
31
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I_S
I _S,pulse
V _SD
T _C=25 °C
V _GS=0 V, I _F=7 A,
T _j=25 °C
Reverse recovery charge
Q _rr
V _R=15 V, I _F=7 A,
di _F/dt =400 A/µs
4) _{See figure 13 for more detailed information}
5) _{See figure 16 for gate charge parameter definition}
-
-
40 A
-
-
160
-
0.55
0.7 V
-
5
- nC
Rev. 2.1
page 3
2013-04-25