BSZ018NE2LSI Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET

OptiMOS^TM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Monolithic integrated Schottky like diode
• Very low on-resistance R _DS(on) @ V _GS=4.5 V
• 100% avalanche tested
• N-channel
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSZ018NE2LSI
Product Summary
V_DS
R_DS(on),max
I_D
Q_OSS
Q_G(0V..10V)
25 V
1.8 mW
40 ^A
23 nC
36 nC
PG-TSDSON-8
(fused leads)
Type
Package
BSZ018NE2LSI PG-TSDSON-8 (fused leads)
Marking
018NE2I
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
40
A
40
40
V _GS=4.5 V,
T _C=100 °C
40
V _GS=4.5 V, T _A=25 °C,
R _thJA=60 K/W²⁾
22
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
160
Avalanche current, single pulse⁴⁾
I _AS
T _C=25 °C
20
Avalanche energy, single pulse
E _AS
I _D=20 A, R _GS=25 W
80
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
Rev. 2.1
page 1
2013-04-25