BSO330N02KG Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOSTM2 Power-Transistor

Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
BSO330N02K G
R _thJS
-
R _thJA
minimal footprint,
t _p≤10 s
-
minimal footprint,
steady state
-
6 cm² cooling area²⁾,
-
t _p≤10 s
6 cm² cooling area²⁾,
-
steady state
-
50 K/W
-
110
-
150
-
63
-
90
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
V _GS(th) V _DS=V _GS, I _D=20 µA
20
-
-V
0.7
0.95
1.2
Zero gate voltage drain current
I _DSS
V _DS=20 V, V _GS=0 V,
T _j=25 °C
-
-
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _DS=20 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=12 V, V _DS=0 V
-
R _DS(on) V _GS=2.5 V, I _D=5.1 A
-
V _GS=4.5 V, I _D=6.5 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=6.5 A
10
-
100
-
100 nA
38
50 mΩ
24
30
1.3
-Ω
20
-S
1)_{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev.1.02
page 3
2010-05-12