BSO330N02KG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM2 Power-Transistor

OptiMOS^™2 Power-Transistor
Features
• For fast switching converters and sync. rectification
• Qualified according to JEDEC¹⁾ for target applications
• Super Logic level 2.5V rated; N-channel
• Dual n-channel
• Excellent gate charge x R _DS(on) product (FOM)
• Low on-resistance R _DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSO330N02K G
Product Summary
V _DS
R _DS(on),max
I_D
V _GS=4.5 V
V _GS=2.5 V
20 V
30 mΩ
50
6.5 A
PG-DSO-8
Type
BSO330N02K
Package
PG-DSO-8
Marking
330N2K
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
V _gs=4.5V, T _C=25 °C²⁾
V _gs=4.5V, T _C=70 °C²⁾
V _gs=2.5V, T _C=25 °C²⁾
V _gs=2.5V, T _C=70 °C²⁾
T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=6.5 A, R _GS=25 Ω
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
dv /dt
V _GS
P _tot
T _j, T _stg
I _D=6.5 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=150 °C
T _A=25 °C²⁾
T _A=25 °C¹⁾
Value
Unit
10 secs steady state
6.5
5.4
A
5.2
4.3
5.1
4.2
A
4
3.3
26
19
mJ
6
kV/µs
±12
V
2.0
1.4
W
2.5
-55 ... 150
°C
0 (0V to 250V)
Rev.1.02
page 1
2010-05-12