BSC190N12NS3G Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Parameter
Symbol Conditions
BSC190N12NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=60 V,
f =1 MHz
-
C _rss
-
t _d(on)
-
t_r
V _DD=60 V, V _GS=10 V,
-
t _d(off)
I _D=20 A, R _G=1.6 Ω
-
t_f
-
1700
210
13
17
16
22
4
2300 pF
280
-
- ns
-
-
-
Gate Charge Characteristics⁴⁾
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q _gs
-
9
- nC
Q _gd
-
6
-
Q _sw
V _DD=60 V, I _D=20 A,
V _GS=0 to 10 V
-
10
-
Q_g
-
26
34
V _plateau
-
5.1
-V
Q _oss
V _DD=60 V, V _GS=0 V
-
29
38 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=39 A,
T _j=25 °C
t _rr
V _R=60 V, I _F=20A ,
Q _rr
di _F/dt =100 A/µs
-
-
44 A
-
-
176
-
0.9
1.2 V
-
81
ns
-
211
- nC
4) _{See figure 16 for gate charge parameter definition}
Rev. 2.5
page 3
2009-10-30