BSC190N12NS3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

BSC190N12NS3 G
OptiMOS^TM3 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 150 °C operating temperature
V _DS
R _DS(on),max
I_D
120 V
19 mΩ
44 A
PG-TDSON-8
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
BSC190N12NS3 G
Package
PG-TDSON-8
Marking
190N12NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
T _A=25 °C,
R _thJA=45 K/W²⁾
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
Gate source voltage
E _AS
V _GS
I _D=39 A, R _GS=25 Ω
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
Value
Unit
44
A
27
8.6
176
60
mJ
±20
V
69
W
-55 ... 150
°C
55/150/56
Rev. 2.5
page 1
2009-10-30