BSC084P03NS3EG Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS P3 Power-Transistor

Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics³⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSC084P03NS3E G
min.
Values
typ.
Unit
max.
C _iss
-
3190 4240 pF
C _oss
V _GS=0 V, V _DS=-15 V,
f =1 MHz
-
1520 2020
C _rss
-
110
160
t _d(on)
t_r
t _d(off)
t_f
V _DD=-15 V, V _GS=-
10 V, I _D=-50 A,
R _G=6 Ω
-
16.4 24.6 ns
-
133.5 200.3
-
33.3 50.0
-
8.1
12.2
Q _gs
-
Q _g(th)
-
Q _gd
V _DD=-24 V, I _D=-50 A,
-
Q _sw
V _GS=0 to -10 V
-
Q_g
-
V _plateau
-
Q _oss
V _DD=-15 V, V _GS=0 V
-
14.8 19.7 nC
5.0
6.7
7.2
10.8
16.9 23.7
43.4 57.7
4.7
-V
34.9 46.4 nC
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=-50 A,
T _j=25 °C
t _rr
V _R=15 V, I _F=|I _S|,
di _F/dt =100 A/µs
Q _rr
-
-
78 A
-
-
200
-
-
-1.1 V
-
45.4
- ns
-
49.7
- nC
Rev. 2.1
page 3
2009-11-16