BSC084P03NS3EG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS P3 Power-Transistor

OptiMOS^TM P3 Power-Transistor
Features
• single P-Channel in SuperSO8
• Qualified according JEDEC¹⁾ for target applications
• 150 °C operating temperature
• 100% Avalanche tested
• V _GS=25 V, specially suited for notebook applications
• ESD protected
• Pb-free; RoHS compliant
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
BSC084P03NS3E G
Product Summary
V _DS
R _DS(on),max
I_D
-30 V
8.4 mΩ
-78.6 A
PG-TDSON-8
Type
Package
Marking Lead free
BSC084P03NS3E G PG-TDSON-8 084P3NSE Yes
Halogen free
Yes
Packing
non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=70 °C
T _A=25 °C
I _D,pulse T _C=25 °C²⁾
E _AS
I _D=-50 A, R _GS=25 Ω
V _GS
P _tot
T _C =25 °C
T _A=25 °C¹⁾
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Rev. 2.1
page 1
Value
-78.6
-62.9
-14.9
-200
105
±25
69
2.5
-55 ... 150
3 (>= 4 kV)
260
55/150/56
Unit
A
mJ
V
W
°C
°C
2009-11-16