BFS380L6 Datasheet, PDF (3/3 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFS380L6
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
I_C = 40 mA, V_CE = 3 V, f = 1 GHz
f_T
-
14
-
Collector-base capacitance
V_CB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
V_CE = 5 V, f = 1 MHz, base grounded
C_cb
-
0.5
-
C_ce
-
0.2
-
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz, collector grounded
-
1.1
-
Noise figure
I_C = 8 mA, V_CE = 3 V, Z_S = Z_Sopt, f = 1.8 GHz
I_C = 8 mA, V_CE = 3 V, Z_S = Z_Sopt, f = 3 GHz
F_min
-
1.3
-
-
1.9
-
Power gain, maximum available¹⁾
I_C = 40 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 1.8 GHz
G_ma
-
12
-
I_C = 40 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 3 GHz
-
8
-
Transducer gain
I_C = 40 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
|S_21e|²
-
10
-
I_C = 40 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 3 GHz
-
6.5
-
Unit
GHz
pF
dB
dB
Third order intercept point at output ²⁾
V_CE = 3 V, I_C = 40 mA, f = 1.8 GHz,
Z_S = Z_L = 50
1dB Compression point at output
I_C = 40 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
IP₃
-
27
- dBm
P_-1dB
- 11.5 -
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2₎
2IP3 _{value depends on termination of all intermodulation frequency components.}

Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Jun-11-2003