BFS380L6 Datasheet, PDF (1/3 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFS380L6
NPN Silicon RF Transistor
Preliminary data

High current capability and low figure for
wide dynamic range application

Low voltage operation

Ideal for low phase noise oscillators up to 3.5 GHz

Low noise figure: 1.1 dB at 1.8 GHz

Built in 2 transistors ( TR1, TR2: die as BFR380L3)
4
5
6
3
2
1
6 TR1
5
4
TR 2
P-TSLP-6-1
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS380L6
Marking
Pin Configuration
Package
FC
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S  96°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
6
15
15
2
80
14
380
150
-65 ... 150
-65 ... 150
Value
 140
Unit
V
mA
mW
°C
Unit
K/W
1
Jun-11-2003