BFS17P Datasheet, PDF(3/5 Page) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

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BFS17P Datasheet, PDF (3/5 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

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BFS17P

Electrical Characteristics at TA = 25Â°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

Collector-base capacitance

VCB = 5 V, f = 1 MHz

Collector-emitter capacitance

VCE = 5 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = 0 , f = 1 MHz

Output capacitance

VCE = 5 V, VBE = 0 , f = 1 MHz

Noise figure

IC = 2 mA, VCE = 5 V, f = 800 MHz,

ZS = 0

Transducer gain

IC = 20 mA, VCE = 5 V, ZS = ZL = 50 ,

f = 500 MHz

Ccb

Cce

Cibo

Cobs

GHz

1.4

1.3 2.5

- 0.55 0.8 pF

- 0.25 -

- 1.45 -

1.5

3.5

5 dB

|S21e|2

- 12.7 -

Linear output voltage

IC = 14 mA, VCE = 5 V, dim = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50

V01=V02

100

- mV

Third order intercept point

IP3

IC = 14 mA, VCE = 5 V, ZS=ZSopt , ZL=ZLopt ,

f = 800 MHz

- dBm

Jul-12-2001

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