BFS17P Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

BFS17P
Electrical Characteristics a T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
V_CB = 25 V, I_E = 0
Emitter-base cutoff current
V_EB = 2.5 V, I_C = 0
DC current gain
I_C = 2 mA, V_CE = 1 V
I_C = 25 mA, V_CE = 1 V
Collector-emitter saturation voltage
I_C = 10 mA, I_B = 1 mA
V_(BR)CEO ¹⁵
-
-V
I_CBO
I_EBO
µA
-
- 0.05
-
-
10
-
-
100
h_FE
V_CEsat
-
20
-
150
20 70
-
-
0.1 0.4 V
2
Jul-12-2001