BFR949T Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR949T
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 15 mA, V_CE = 6 V, f = 1 GHz
Collector-base capacitance
V_CB = 10 V, f = 1MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1MHz
f_T
7
9
- GHz
C_cb
- 0.31 0.4 pF
C_ce
-
0.2
-
C_eb
-
0.6
-
Noise figure
F
dB
I_C = 5 mA, V_CE = 6 V, Z_S = Z_Sopt ,
f = 1 GHz
-
1 2.5
I_C = 3 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 1.8 GHz
-
1.5
-
Power gain, maximum stable ¹⁾
G_ms
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
-
20
-
Power gain, maximum available ²⁾
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
G_ma
-
14
-
Transducer gain
I_C = 15 mA, V_CE = 6 V, Z_S = Z_L = 50 ,
f = 1 GHz
|S_21e|²
13 16
-
I_C = 10 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
-
11
-
1_{Gms = |S21 / S12|}
2_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Oct-24-2001