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| BFR949T Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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BFR949T
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 10
-
-V
Base-emitter forward voltage
IE = 25mA
Collector-base cutoff current
VCB = 10 V, IE = 0
VBEF
ICBO
-
- 1.05
-
- 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 6 V
IEBO
hFE
-
-
0.1 µA
100 140 200 -
2
Oct-24-2001
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