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BFR949F Datasheet, PDF (3/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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Electrical Characteristics
Parameter
AC Characteristics
Transition frequency
IC = 15 mA, VCE = 6 V, f = 1 GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = vbe = 0
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = vbe = 0
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = vcb = 0
Noise figure
IC = 5 mA, VCE = 6 V, ZS = ZSopt ,
f = 1 GHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
ZL = ZLopt, f = 900 MHz
Power gain, maximum available1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
Transducer gain
IC = 15 mA, VCE = 6 V, ZS = ZL = 50 ,
f = 1 GHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 1.8 GHz
1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = |S21 / S12|
BFR949F
Symbol
Values
Unit
min. typ. max.
fT
7
9
- GHz
Ccb
-
0.3
- pF
Cce
-
0.2
-
Ceb
-
0.7
-
F
dB
-
1
2.5
-
1.5
-
Gms
-
21
--
Gma
- 15.5 - dB
|S21e|2
dB
-
17
-
-
12
-
3
Jan-04-2002
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