BFR949F Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
Preliminary data

For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
3

f_T = 9 GHz
F = 1 dB at 1 GHz
BFR949F
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR949F
Marking
RKs
Pin Configuration
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S
93°C
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
10
20
20
1.5
35
4
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
R_thJS
Value
225
Unit
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jan-04-2002