BFR93AW Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

BFR93AW
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 30 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
C_ce
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
4.5 6
- GHz
- 0.62 0.9 pF
- 0.28 -
-
1.7
-
dB
-
2
-
-
3.3
-
Power gain, maximum available ¹⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
G_ma
f = 1.8 GHz
-
15
-
-
10
-
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
-
13
-
-
7.5
-
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Jul-30-2001