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| BFR93AW Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
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BFR93AW
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
V(BR)CEO 12
-
-V
ICES
-
- 100 µA
ICBO
-
- 100 nA
IEBO
-
-
10 µA
hFE
50 100 200 -
2
Jul-30-2001
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