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BFR92P_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFR92P
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz
fT
3.5
5
-
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
- 0.39 0.55
Unit
GHz
pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
- 0.23 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
- 0.64 -
Noise figure
IC = 2 mA, VCE = 6 V, ZS = ZSopt,
f = 900 MHz
IC = 2 mA, VCE = 6 V, ZS = ZSopt,
f = 1.8 GHz
F
dB
-
1.4
-
-
2
-
Power gain, maximum available1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Gma
-
16
-
- 10.5 -
Transducer gain
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
|S 21e|2
dB
-
13
-
-
7.5
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
3
2007-04-26
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