BFR92P_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
• Complementary type: BFT91 (PNP)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFR92P
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR92P
Marking
Pin Configuration
GFs
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
V_CES
V_CBO
V_EBO
I_C
I_B
Total power dissipation-
P_tot
T_S ≤ 48 °C
Junction temperature
T_j
Ambient temperature
T_A
Storage temperature
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
15
20
20
2.5
45
4
280
150
-65 ... 150
-65 ... 150
Value
≤ 365
Unit
V
mA
mW
°C
Unit
K/W
1
2007-04-26