BFR360L3 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR360L3
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 15 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
C_ce
V_CE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
F_min
I_C = 3 mA, V_CE = 3 V, Z_S = Z_Sopt,
f = 1.8 GHz
11 14
-
- 0.26 0.5
- 0.15 -
- 0.43 -
-
1
-
Power gain, maximum stable¹⁾
I_C = 15 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt, f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 15 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 3 GHz
Transducer gain
I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
G_ms
- 16.5 -
G_ma
- 11.5 -
|S_21e|²
- 13.5 -
I_C = 30 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 3 GHz
-
9
-
Unit
GHz
pF
dB
-
dB
dB
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 15 mA, f = 1.8 GHz,
Z_S = Z_L = 50
1dB Compression point at output
I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
IP₃
-
24
- dBm
P_-1dB
-
8.5
-
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2₎
2IP3 _{value depends on termination of all intermodulation frequency components.}

Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Jul-01-2003