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| BFR360L3 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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BFR360L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 15 mA, VCE = 3 V
V(BR)CEO 6
9
-
ICES
-
-
10
ICBO
-
-
100
IEBO
-
-
1
hFE
60 130 200
Unit
V
µA
nA
µA
-
2
Jul-01-2003
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