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BFR360F Datasheet, PDF (3/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
BFR360F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
IC = 15 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
Ccb
VCB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
Cce
VCE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
Ceb
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
Fmin
IC = 3 mA, VCE = 3 V, ZS = ZSopt,
f = 1.8 GHz
11 14
-
- 0.32 0.5
-
0.2
-
-
0.4
-
-
1
-
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma
- 15.5 -
-
11
-
Transducer gain
IC = 15 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
|S21e|2
-
13
-
IC = 15 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 3 GHz
-
9
-
Unit
GHz
pF
dB
dB
Third order intercept point at output2)
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50
1dB Compression point at output
IC = 15 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
IP3
-
24
- dBm
P-1dB
-
9
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
 Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Jun-16-2003