BFR360F Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
Preliminary data

Low voltage/ low current operation

For low noise amplifiers
3

For Oscillators up to 3.5 GHz and Pout > 10 dBm

Low noise figure: 1.0 dB at 1.8 GHz
BFR360F
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S
98°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value

250
Unit
V
mA
mW
°C
Unit
K/W
1
Jun-16-2003