BFR35AP_07 Datasheet, PDF (3/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR35AP
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 15 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
3.5
5
- GHz
- 0.39 0.55 pF
Collector emitter capacitance
V_CE = 10 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.23 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.64 -
Noise figure
F
dB
I_C = 2 mA, V_CE = 6 V, Z_S = Z_Sopt,
f = 900 MHz
-
1.4
-
f = 1.8 GHz
-
2
-
Power gain, maximum available¹⁾
I_C = 15 mA, V_CE = 8 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 900 MHz
f = 1.8 GHz
G_ma
-
16
-
- 10.5 -
Transducer gain
I_C = 15 mA, V_CE = 8 V, Z_S = Z_L = 50Ω,
f = 900 MHz
|S _21e|²
dB
-
13
-
f = 1.8 GHz
-
7.5
-
1_{Gma = |S21/S12| (k-(k}2_-1)1/2₎
3
2007-03-30