BFR35AP_07 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents
from 0.5mA to 20 mA
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BFR35AP
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR35AP
Marking
Pin Configuration
GEs
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation²⁾
T_S ≤ 48°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point³⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
3_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
15
20
20
2.5
45
4
280
150
-65 ... 150
-65 ... 150
Value
≤ 365
Unit
V
mA
mW
°C
Unit
K/W
1
2007-03-30