BFR181_14 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFR181
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
I_C = 10 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
f_T
6
8
- GHz
C_cb
- 0.27 0.45 pF
Collector emitter capacitance
V_CE = 10 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
-
0.2
-
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.35 -
Minimum noise figure
I_C = 2 mA, V_CE = 8 V, Z_S = Z_Sopt,
f = 900 MHz
I_C = 2 mA, V_CE = 8 V, Z_S = Z_Sopt,
f = 1.8 GHz
NF_min
dB
-
0.9
-
-
1.2
-
Power gain, maximum stable¹⁾
G_ms
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
- 18.5 - dB
Power gain, maximum available²⁾
G_ma
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
- 12.5 - dB
Transducer gain
I_C = 5 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 900 MHz
I_C = 5 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 1.8 MHz
|S_21e|²
dB
- 14.5 -
-
9.5
-
1_{Gms = |S21 / S12|}
2_{Gma = |S21e / S12e| (k-(k²-1)1/2)}
3
2014-04-03