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| BFR181_14 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor | |||
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BFR181
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
-V
ICES
-
- 100 µA
ICBO
-
- 100 nA
IEBO
-
-
1 µA
hFE
70 100 140 -
2
2014-04-03
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