BFQ19S_10 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFQ19S
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 70 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
4
5.5
- GHz
- 1.05 1.35 pF
Collector emitter capacitance
V_CE = 10 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
-
0.4
-
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
-
3.9
-
Noise figure
F
dB
I_C = 20 mA, V_CE = 6 V, Z_S = Z_Sopt,
f = 900 MHz
-
1.8
-
f = 1.8 GHz
-
3
-
Power gain, maximum available¹⁾
I_C = 70 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 900 MHz
G_ma
- 11.5 -
f = 1.8 GHz
-
7
-
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50Ω,
f = 900 MHz
|S _21e|²
dB
-
9.5
-
f = 1.8 GHz
-
4
-
Third order intercept point at output
IP₃
V_CE = 8 V, I_C = 70 mA, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 1.8 GHz
-
32
- dBm
1_{Gma = |S21/S12| (k-(k}2_-1)1/2₎
3
2010-03-12