BFQ19S_10 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFQ19S
1
2
3
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFQ19S
Marking
Pin Configuration
FG
1=B
2=C
3=E
Package
SOT89
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation²⁾
T_S ≤ 85°C
Junction temperature
Operation junction temperature range
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_jo
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point³⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
3_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
15
20
20
3
210
21
1
150
- ... -
-65 ... 150
-65 ... 150
Value
≤ 65
Unit
V
mA
W
°C
-
°C
Unit
K/W
1
2010-03-12